description and applications: bipolarics' B12V114 is a high performance silicon bipolar transistor intended for use in low noise applications at vhf, uhf and microwave frequencies. these applications include narrowband and wideband amplifiers, oscillators and micropower transmitters. typical applications include cellu- lar telephone preamplifiers/mixers, catv amplifiers and part 15 receivers and transmitters. commercial plastic, sur- face mount and hermetic (including stripline) packaging options make this device very versatile; from consumer prod- uct to space flight. v cbo collector-base voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 1.5 v i c collector current 60 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c (1) depends on package absolute maximum ratings: bipolarics, inc. part number B12V114 features: high gain bandwidth product f t = 10 ghz typ @ i c = 25ma low noise figure 1.4 db typ at 1.0 ghz 1.7 db typ at 2.0 ghz high gain |s 21 | 2 = 16.9 db @ 1.0 ghz 12.0 db @ 2.0 ghz dice, plastic, hermetic and surface mount packages available performance data: electrical characteristics (t a = 25 o c) product data sheet npn low noise silicon microwave transistor symbol parameters rating units symbol parameters & conditions unit min. typ. max. f t gain bandwidth product ghz 10.0 v ce = 8v, i c = 25 ma unless stated v ce = 8v, i c =25 ma c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.25 (1) |s 21 | 2 insertion power gain: f = 1.0 ghz db 16.9 f = 2.0 ghz db 12.0 p 1d b power output at 1db compression: f = 1.0 ghz dbm 18.0 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15.0 nf noise figure: v ce = 8v, i c = 10ma f = 1.0 ghz db 1.4 h fe forward current transfer ratio: f = 1mhz 30 150 300 i cbo collector cutoff current : v cb = 8v a 0.2 i ebo emitter cutoff current : v eb = 1v a 1.0
bipolarics, inc. part number B12V114 product data sheet page 2 npn low noise silicon microwave transistor ghz mag ang mag ang mag ang mag ang db 0.20000 0.5956 -62 15.84 147 0.0251 59 0.7244 -29 24.0 0.40000 0.5821 -114 12.02 132 0.0446 56 0.6309 -45 21.6 0.60000 0.5248 -134 9.120 114 0.0512 50 0.4466 -50 19.2 0.80000 0.5188 -149 7.244 106 0.0602 52 0.4466 -54 17.2 1.00000 0.4786 -164 6.456 99 0.0676 55 0.3235 -52 16.2 1.20000 0.4518 -168 5.370 92 0.0741 56 0.3311 -52 14.6 1.40000 0.4623 -175 4.841 89 0.0812 58 0.2660 -63 13.7 1.60000 0.5688 166 4.315 85 0.0901 59 0.2454 -61 12.7 1.80000 0.5432 164 3.758 84 0.1023 60 0.2722 -63 11.5 2.00000 0.5559 157 3.630 78 0.1135 58 0.2317 -65 11.2 2.20000 0.5956 146 3.388 74 0.1202 60 0.2187 -75 10.6 2.40000 0.5888 142 3.090 71 0.1230 62 0.1905 -79 9.8 2.60000 0.6998 138 2.917 69 0.1333 64 0.1995 -86 9.3 2.80000 0.6918 132 2.754 65 0.1396 65 0.1927 -93 8.8 3.00000 0.6382 131 2.511 63 0.1479 66 0.1883 -97 8.0 3.20000 0.6531 127 2.344 61 0.1548 67 0.1862 -106 7.4 3.40000 0.6683 124 2.213 59 0.1603 68 0.1737 -111 6.9 3.60000 0.7161 115 2.162 56 0.1698 69 0.2137 -123 6.7 3.80000 0.7079 113 1.972 53 0.1698 68 0.1862 -132 5.9 4.00000 0.6683 116 1.927 52 0.1778 72 0.2089 -127 5.7 4.20000 0.6760 109 1.840 48 0.1927 69 0.2041 -132 5.3 typical s parameters: bias condition: v ce = 8 v, i c = 10 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 freq. s11 s21 s12 s22 s21 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 36 )
bipolarics, inc. part number B12V114 product data sheet freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db 0.20000 0.4466 -96 17.78 143 0.0229 61 0.5888 -36 25.0 0.40000 0.4897 -128 14.28 124 0.0380 58 0.4677 -53 23.1 0.60000 0.4677 -154 10.35 108 0.0457 59 0.3090 -56 20.3 0.80000 0.4731 -157 8.317 100 0.0562 61 0.2951 -58 18.4 1.00000 0.4365 -166 6.998 86 0.0645 64 0.2398 -54 16.9 1.20000 0.4120 -170 5.888 80 0.0758 65 0.2483 -53 15.4 1.40000 0.4365 176 5.128 87 0.0812 68 0.2089 -65 14.2 1.60000 0.5623 170 4.518 84 0.0922 69 0.1905 -65 13.1 1.80000 0.5308 158 4.168 83 0.1059 68 0.1972 -70 12.4 2.00000 0.5495 152 3.981 78 0.1161 64 0.1659 -70 12.0 2.20000 0.5888 142 3.758 73 0.1288 66 0.1445 -84 11.5 2.40000 0.5821 137 3.273 71 0.1333 67 0.1303 -88 10.3 2.60000 0.6165 135 3.126 69 0.1462 69 0.1428 -100 9.9 2.80000 0.6309 130 2.917 65 0.1531 69 0.1258 -109 9.3 3.00000 0.6309 129 2.630 64 0.1621 70 0.1348 -114 8.4 3.20000 0.6456 124 2.483 61 0.1678 68 0.1288 -124 7.9 3.40000 0.6606 121 2.371 60 0.1757 70 0.1230 -131 7.5 3.60000 0.6918 115 2.317 56 0.1862 69 0.1905 -137 7.3 3.80000 0.6531 112 2.113 54 0.1862 70 0.1445 -156 6.5 4.00000 0.6531 114 2.089 54 0.1995 73 0.1584 -141 6.4 4.20000 0.6683 107 1.949 49 0.2162 70 0.1819 -152 5.8 npn low noise silicon microwave transistor page 3 typical s parameters: bias condition: v ce = 8v, i c = 25 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 3 6 )
bipolarics, inc. part number b12v 1 14 npn low noise silicon microwave transistor product data sheet page 4 freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db 0.20000 0.4027 -100 18.30 141 0.0208 63 0.5370 -40 25.25 0.40000 0.4786 -138 14.45 122 0.0346 60 0.4120 -53 23.20 0.60000 0.4731 -163 10.71 106 0.0436 62 0.2754 -55 20.6 0.80000 0.4623 -164 8.317 88 0.0524 66 0.2570 -58 18.4 1.00000 0.4365 -170 6.998 94 0.0602 69 0.2137 -52 16.9 1.20000 0.4168 174 5.888 88 0.0707 70 0.2238 -54 15.4 1.40000 0.4365 173 5.128 86 0.0794 71 0.1883 -67 14.2 1.60000 0.5623 168 4.466 83 0.0901 72 0.1757 -65 13.0 1.80000 0.5370 155 4.120 81 0.1035 70 0.1862 -70 12.3 2.00000 0.5495 150 3.935 77 0.1148 68 0.1548 -69 11.9 2.20000 0.5888 140 3.715 72 0.1230 70 0.1318 -84 11.4 2.40000 0.5888 135 3.235 70 0.1288 72 0.1135 -98 10.2 2.60000 0.6237 133 3.090 68 0.1428 73 0.1258 -100 9.8 2.80000 0.6382 128 2.884 65 0.1513 74 0.1148 -109 9.2 3.00000 0.6382 127 2.630 63 0.1584 73 0.1202 -116 8.4 3.20000 0.6531 123 2.454 61 0.1659 73 0.1202 -128 7.8 3.40000 0.6606 120 2.317 60 0.1737 75 0.1148 -134 7.3 3.60000 0.7079 114 2.290 56 0.1862 74 0.1412 -145 7.2 3.80000 0.6606 111 2.089 54 0.1862 74 0.1380 -158 6.4 4.00000 0.6606 113 2.065 53 0.1995 77 0.1513 -143 6.3 4.20000 0.6760 106 1.949 49 0.2187 74 0.1737 -156 5.8 typical s parameters: bias condition: v ce = 8 v, i c = 40 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 (note: s-parameters were taken in a ceramic micro-x package; see package outline 35 , 36 )
bipolarics, inc. part number b12v 1 14 npn low noise silicon microwave transistor page 5 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 87 package: 0. 0 85 " plastic,short lead 86 package: 0. 0 85 " plastic,surface mount 0 4 package: 0. 145 " plastic x-pac 85 package: 0.0 85 " plastic micro-x
part number B12V114 npn low noise silicon microwave transistor page 6 bipolarics, inc. 92 package: to-92 02 package: sot-23 1 4 package: sot-143 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90 02 package: sot-23j
bipolarics, inc. part number b12v 1 14 page 7 npn low noise silicon microwave transistor ordering information: p/n including pkg temp range/app B12V114 00 -55 to +125 ? c B12V114 02 -40 to +85 ? c B12V114 14 -40 to +85 ? c B12V114 35 -55 to +125 ? c B12V114 9 2 -40 to +85 ? c notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice lead 1 2 3 4 14 , 85 , 86 , 87 , 3 5 , base emitter collector emitter 36 & 04 packages bipolarics, inc. 467 66 l ake vie w blv d. frem on t, ca 94 53 8 phone: (510)226-6565 fax: (510) 226-6765 -05 package: micro-x 0. 0 85 " hermetic (mm)
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